ELECTRICAL PROPERTIES OF ZnO(x)–Co3O4(1−x) (x = 0.7, 0.5, 0.3) OXIDE THIN FILMS VIA FOUR POINT PROBE DEVICE: SUBSTRATE TEMPERATURE EFFECT ON THE ELECTRICAL PROPERTIES

Abstract

ZnO[Formula: see text]–Co3O[Formula: see text]([Formula: see text]= 0.7, 0.5, 0.3) oxide thin films were synthesized via spray pyrolysis deposition. The obtained films were investigated to find the surface electrical resistance ([Formula: see text]) and conductance ([Formula: see text]) using the four point probe device and the Van der Pauw mathematical relation to estimate the electrical resistivity ([Formula: see text]) and conductivity ([Formula: see text]). In addition, the electrical resistance, conductance, resistivity and conductivity were obtained. From the obtained results, we have observed that the electrical quantities of the nanocomposite films are close to the interval bounds of the electrical quantities of the pure materials. For example, at room temperature, the electrical resistivity values of ZnO, Co3O4, ZnO[Formula: see text]–Co3O[Formula: see text], ZnO[Formula: see text]–Co3O[Formula: see text] and ZnO[Formula: see text]–Co3O[Formula: see text] were found to be around 6.89 × 10[Formula: see text], 1.58−103, 339.75, 611.55 and 1333.632 Ω.cm, respectively. This note can be depending on the density (concentration) of the carriers (electron/holes) of the constituents (pure material) of the composite material. Besides, the variations of these quantities were measured as a function of the substrate temperature. It was found that the conductance and conductivity vary proportionally with the temperature, but the electrical resistance and resistivity were inversely proportional. This remark indicates a semiconducting electrical behavior. The possible reaction mixture of pure semiconductors materials in the synthesis process is explained. The studied semiconductor oxides show interesting electrical properties, which makes them potential candidates to be used in various optoelectronic devices.