EVOLUTION OF THE COPPER SURFACE IN THE COURSE OF OXIDATION BY CCl4–L (L=THF, DMF, DMSO): SCANNING PROBE MICROSCOPE STUDY

Abstract

The evolution of compact surface of the 100 nm copper film deposited on the glass-ceramics doped with vanadium coating in the course of the oxidation by the CCl 4– L (L = dimethylformamide (DMF), tetrahydrofuran (THF), dimethylsulfoxide (DMSO), CCl 4 concentration ≈ 1 mol/L) was studied by atomic force microscopy (AFM) in contact mode. The dynamics of active centers formation and destruction was investigated in the course of the oxidation process. The metallic sample dissolution rate was estimated as a function of the coordinating solvent nature. The development of the metal surface oxidation was established to lead to a significant increase of surface roughness. This phenomenon can be explained by the fact that different parts of the surface react at different rates. Further course of the reaction leads to a significant decrease of the surface roughness of copper films. The amount of the metal reacted has an almost linear dependence on the reaction time. AFM scans indicate that there is the same mechanism of the reaction between copper and carbon tetrachloride for all solvents.