THEORETICAL STUDY OF Si and N ADSORPTION ON THE Si-TERMINATED SiC(001) SURFACE-Reference-Cited by-同舟云学术

THEORETICAL STUDY OF Si and N ADSORPTION ON THE Si-TERMINATED SiC(001) SURFACE

Published:1999-12 Issue:06 Volume:06 Page:1143-1150
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

PIZZAGALLI L.¹,CATELLANI A.²,GALLI G.³,GYGI F.³,BARATOFF A.⁴

Affiliation:

1. Lawrence Livermore National Laboratory, L-415, PO Box 808, Livermore, CA 94550, USA

2. NR-MASPEC, Via Chiavari 18/A, I-43100 Parma, Italy

3. Lawrence Livermore National Laboratory, PO Box 808, Livermore, CA 94550, USA

4. Department of Physics and Astronomy, Basel University, Klingelbergstr. 82, CH-4056 Basel, Switzerland

Abstract

We report the results of first principles molecular dynamics simulations of the adsorption of Si and N atoms on a Si-terminated p(2×1) SiC(001) surface. In particular, we discuss different structural models for the Si-rich (3×2) surface, and the adsorption of 1/8, 1/2 and 1 monolayer nitrogen on the p(2×1) surface. Our simulations show that a SiC(001)-p(2×1) surface covered by a nitrogen monolayer is an inert substrate which inhibits growth.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X99001268

Reference39 articles.

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