GROWTH AND ELECTRICAL PROPERTIES OF (Bi, Nd)4Ti3O12 THIN FILMS-Reference-Cited by-同舟云学术

GROWTH AND ELECTRICAL PROPERTIES OF (Bi, Nd)4Ti3O12 THIN FILMS

Published:2004-12 Issue:06 Volume:11 Page:503-507
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

YANG CHANGHONG¹,WANG ZHUO¹,PAN DONGYING¹,HAN JIANRU¹,LI QINGXIA²,WANG JIANHUA²

Affiliation:

1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, P. R. China

2. Shandong Metallurgical Research Institute, Jinan 250014, P. R. China

Abstract

Neodymium-doped Bi 4 Ti 3 O 12 ( Bi 3.15 Nd 0.85 Ti 3 O 12) thin films have been synthesized by metalorganic solution decomposition and deposited on SiO 2/ p - Si (111) substrate by spin coating. The structural characteristic and crystallization of the films were examined by X-ray diffraction and atomic force microscope. The insulating property, dielectric constant and dissipation loss were found to be dependent on the annealing temperature. Nonhysteretic C – V curves at various frequencies were also collected. The films in the ON and OFF states were relatively stable.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X0400644X

Reference14 articles.

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4. Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics

5. Fatigue-free samarium-modified bismuth titanate (Bi4−xSmxTi3O12) film capacitors having large spontaneous polarizations

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