SURFACE STRUCTURES ON CLEAVED SILICON BY CLEAVAGE LUMINESCENCE DETECTION

Abstract

This paper reports on further research into the structure and properties of the cleaved surfaces of silicon, using vacuum cleavage luminescence detection methods. Results show resistance partially recovers during the cleavage process through "crack healing". When the elasticity of the parts transmitting the applied stress temporarily absorbs the initial rupture stress, the crack stops and partially re-closes until the applied force "catches up" and reapplies stress. The high resistance created by the two Schottky barriers prevents resistance recovery from mere surfaces re-contact. Instead, resistance recovery from the atom-to-atom re-closure surface healing is more likely, as expected from a Three Bond Scission Model (TBS) silicon surface structure.