PERFORMANCE ANALYSIS OF COPPER TIN SULFIDE, Cu2SnS3 (CTS) WITH VARIOUS BUFFER LAYERS BY USING SCAPS IN SOLAR CELLS

Abstract

This work examines the performance of the Cu2SnS3 (CTS) solar cells using the solar cell capacitance simulator (SCAPS) approach. The performance of the CTS solar cell was evaluated in terms of [Formula: see text], [Formula: see text], fill factor and efficiency. The structural parameter variation of CTS solar cell has been studied in terms of buffer and absorber layer thickness, bandgap, effect of temperature on total efficiency of the solar cell. Increasing the thickness of the CdS buffer layer decreases the efficiency of the simulated solar cell. A significant increase in the efficiency of the solar cell to 20.36% was obtained with a simulated buffer layer thickness to 10[Formula: see text]nm. In terms of the CTS absorber layer thickness, the efficiency of the solar cell increases by increasing the thickness of absorber layer. By setting the thickness of CTS to 4.0[Formula: see text][Formula: see text]m, the efficiency obtained is 20.36%. It is observed that an increase in the bandgap can enhance the efficiency of the solar cell. In the performed simulation, an 0.9[Formula: see text]eV bandgap resulted in a 11.58% cell efficiency and a 1.25[Formula: see text]eV bandgap resulted in 21.96% cell efficiency. In terms of temperature, the efficiency of 20.36% was obtained at 300[Formula: see text]K, and as the temperature increases, cell efficiency will decrease.