Cs and Oxygen Adsorption on Ge(001) and GaAs(001) Surfaces Studied by Metastable De-Excitation Spectroscopy-Reference-Cited by-同舟云学术

Cs and Oxygen Adsorption on Ge(001) and GaAs(001) Surfaces Studied by Metastable De-Excitation Spectroscopy

Published:1998-02 Issue:01 Volume:05 Page:255-259
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

Yamada K.¹,Nishigaki S.²,Naitoh M.²

Affiliation:

1. Ishikawa National College of Technology, Tsubata, Ishikawa 929-03, Japan

2. Kyushu Institute of Technology, Tobata, Kitakyushu 804, Japan

Abstract

Metastable de-excitation spectroscopy (MDS) has been employed to elucidate the local electronic structure of oxygen plus alkali metal (Cs) coadsorbed layers on Ge(001)-(2×1) and GaAs(001)-(4×2) surfaces. Upon admission of oxygen at about 0.05–0.6 L, the MDS emission intensity due to Cs 6s-induced states [Formula: see text] mostly decreased, indicating direct transfer of [Formula: see text] electrons to oxygen. This initial step is followed by a steady process of substrate oxidation irrelevant to alkali charge transfer. Alkali-promoted oxygen uptake processes are discussed in connection with substrate-dependent variations in the [Formula: see text] charge states measured by MDS.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X98000463

Reference15 articles.

1. Alkali-metal-promoted oxidation of the Si(100)2×1 surface: Coverage dependence and nonlocality

2. Early stages of the alkali-metal-promoted oxidation of silicon

3. Oxygen adsorption on a Ge(100) surface

4. A molecular beam study of alkali promotion of O2 sticking on Ge(100) and Si(100)

5. Potassium and oxygen adsorption on Si(100): local charge states probed with helium metastables