NEW ELECTRONIC STATES ON CLEAN Si(110)-“16×2” SURFACES-Reference-Cited by-同舟云学术

NEW ELECTRONIC STATES ON CLEAN Si(110)-“16×2” SURFACES

Published:1995-10 Issue:05 Volume:02 Page:573-577
ISSN:0218-625X
Container-title:Surface Review and Letters
language:en
Short-container-title:Surf. Rev. Lett.

Author:

CRICENTI A.¹,NESTERENKO B.²,PERFETTI P.¹,LE LAY G.³,SEBENNE C.⁴

Affiliation:

1. Istituto di Struttura della Materia, CNR, Via Enrico Fermi 38, I–00044 Frascati, Italy

2. Institute of Semiconductor Physics, Prospekt Nauki 45, 252650 Kiev-28, Ukraine

3. CRMC2, UPR CNRS 7251, Campus de Luminy, 13288 Marseille Cedex 9, France

4. Laboratoire de Physique des Solides, URA CNRS 154, Université P. et M. Curie, 75252 Paris, Cedex 05, France

Abstract

The electronic properties of a clean Si (110)-“16×2” surface have been studied by angle-resolved ultraviolet photoelectron spectroscopy (ARUPS) and surface differential reflectivity (SDR). Four surface states have been recognized by ARUPS and their dispersions have been mapped along the main symmetry lines in the surface Brillouin zone. SDR experiments revealed transitions between filled and empty surface states at ~ 1.8, 2.4, and 2.9 eV. The results are explained on the basis of a new structural model of the Si (110)-“16×2” phase.

Publisher

World Scientific Pub Co Pte Lt

Subject

Materials Chemistry,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218625X95000546

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature dependence of the photoemission spectra of Si(110) between 300 and 1630 K;Surface Science;2001-03

2. Elemental structure in Si(110)-“16×2” revealed by scanning tunneling microscopy;Physical Review B;2000-01-15

3. High-temperature phase transitions at the Ge(110) surface;Surface Science;2000-01

4. High-temperature photoemission spectroscopy of the Ge(110) surface and high-temperature surface order–disorder phase transitions;Journal of Electron Spectroscopy and Related Phenomena;1999-06

5. Recombination properties of clean “16 × 2” andPb- orAl-covered (110) silicon surfaces;Il Nuovo Cimento D;1998-07