Novel Metal Chalcogenide–Conducting Polymer Hybrid Material for Electronic Memory Devices

Abstract

New hybrid (organic–inorganic) material based on nanocrystalline CdSe capped with EDTA and poly(O-toluidine) doped with camphor sulfonic acid (POT-CSA) is processed from solution and characterized in order to relate the device function (optical absorption, charge separation and transport properties) to active-layer properties and device parameters. POT/CdSe hybrid material has been synthesized using physical mixing method. X-ray diffraction (XRD) and scanning electron microscopy (SEM) are used to investigate the structural and morphological properties. The organic–inorganic composite system was applied as an active device component to demonstrate the electrical memory effects. The device exhibited a nonvolatile, resistive switching performance with a constant ON–OFF current ratio. The nonvolatile behavior was confirmed by applying a 2.5-V read pulse.