Affiliation:
1. National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing 100083, P. R. China
Abstract
Surface morphology evolution of strained InAs/GaAs (331) A films was systematically investigated in this paper. Under As -rich conditions, InAs elongated islands aligned along [Formula: see text] are formed at a substrate temperature of 510°C. We explained it as a result of the anisotropic diffusion of adatoms. Under In -rich conditions, striking change has occurred with respect to the surface morphology of the InAs layers. Instead of anisotropic InAs elongated islands, unique island-pit pairs randomly distributed on the whole surface were observed. Using cooperative nucleation mechanisms proposed by Jesson et al. [Phys. Rev. Lett.77, 1330 (1996)], we interpret the resulting surface morphology evolution.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology
Cited by
2 articles.
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