Affiliation:
1. Government Arts and Science College, Melur-625 106, India
Abstract
The spin-dependent electron transmission phenomenon in an SiGe/Si/SiGe resonant semiconductor heterostructure is employed theoretically to investigate the output transmission current polarization at zero magnetic field. Transparency of electron transmission is calculated as a function of electron energy as well as the well width, within the one electron band approximation along with the spin-orbit interaction. Enhanced spin-polarized resonant tunneling in the heterostructure due to Dresselhaus and Rashba spin-orbit coupling induced splitting of the resonant level is observed. We predict that a spin-polarized current spontaneously emerges in this heterostructure and we estimate theoretically that the polarization can reach 100%. This effect could be employed in the fabrication of spin filters, spin injectors, and detectors based on nonmagnetic semiconductors.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Computer Science Applications,Condensed Matter Physics,General Materials Science,Bioengineering,Biotechnology
Cited by
1 articles.
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