STUDY OF THE GATE INSULATOR/SILICON INTERFACE UTILIZING SOFT AND HARD X-RAY PHOTOELECTRON SPECTROSCOPY AT SPring-8-Reference-Cited by-同舟云学术

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STUDY OF THE GATE INSULATOR/SILICON INTERFACE UTILIZING SOFT AND HARD X-RAY PHOTOELECTRON SPECTROSCOPY AT SPring-8

Published:2006-08 Issue: Volume: Page:
ISSN:
Container-title:Frontiers in Electronics
language:
Short-container-title:

Author:

HATTORI T.¹,NOHIRA H.²,AZUMA K.³,SAKAI K. W.⁴,NAKAJIMA K.⁴,SUZUKI M.⁴,KIMURA K.⁴,SUGITA Y.⁵,IKENAGA E.⁶,KOBAYASHI K.⁶,TAKATA Y.⁷,KONDO H.⁸,ZAIMA S.⁸

Affiliation:

1. Research Center for Silicon Nano-Science, Advanced Research Laboratories, Musashi Institute of Technology, 8-15-1 Todoroki, Setagaya-ku, Tokyo, 158-0082, Japan

2. Musashi Institute of Technology, Tokyo, 158-8557, Japan

3. Musashi Advanced LCD Technologies Development Center Co., Ltd., Yokohama, 244-0817, Japan

4. Kyoto University, Kyoto 606-8501, Japan

5. Fujitsu Laboratories Ltd., Atsugi 243-0197, Japan

6. JASRI/Spring-8, Hyogo, 679-5198, Japan

7. RIKEN/Spring-8, Hyogo, 679-5148, Japan

8. Nagoya University, Nagoya 464-8603, Japan

Publisher

WORLD SCIENTIFIC

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