GaN-BASED POWER HIGH ELECTRON MOBILITY TRANSISTORS
Author:
Affiliation:
1. EE Department, IIT-Madras, Chennai 600 036, India
2. ECSE Department, RPI, 8th Street Troy, New York 12180, USA
3. Sensor Electronic Technology, Inc., Columbia, SC 29209, USA
Publisher
WORLD SCIENTIFIC
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Sonochemical Assisted Solvothermal Synthesis of Gallium Oxynitride Nanosheets and their Solar-Driven Photoelectrochemical Water-Splitting Applications;Scientific Reports;2016-08-26
2. Gallium nitride devices for power electronic applications;Semiconductor Science and Technology;2013-06-21
3. Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs);Polarization Effects in Semiconductors;2008
4. Metal Semiconductor Field Effect Transistors;Electrical Engineering Handbook;2007-12-22
5. Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review;Journal of Materials Science: Materials in Electronics;2006-02
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