ULTRAVIOLET PHOTODETECTORS BASED UPON III-N MATERIALS-Reference-Cited by-同舟云学术

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ULTRAVIOLET PHOTODETECTORS BASED UPON III-N MATERIALS

Published:2003-07 Issue: Volume: Page:429-475
ISSN:
Container-title:Wide Energy Bandgap Electronic Devices
language:
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Author:

Dupuis Russell D.¹,Campbell Joe C.¹

Affiliation:

1. Microelectronics Reserach Center, The University of Texas at Austin, Austin, TX 78758, USA

Publisher

WORLD SCIENTIFIC

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Compositional modulation and optical emission in AlGaN epitaxial films;Journal of Applied Physics;2006-11-15

2. 247nm solar-blind ultraviolet p-i-n photodetector;Journal of Applied Physics;2006-11

3. Spontaneous compositional superlattice and band-gap reduction in Si-doped AlxGa1−xN epilayers;Applied Physics Letters;2005-11-07

4. Improved solar-blind external quantum efficiency of back-illuminated AlxGa1−xN heterojunction pin photodiodes;Electronics Letters;2002

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