EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES-Reference-Cited by-同舟云学术

EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES

Published:2001-07 Issue:05 Volume:11 Page:827-840
ISSN:0218-2025
Container-title:Mathematical Models and Methods in Applied Sciences
language:en
Short-container-title:Math. Models Methods Appl. Sci.

Author:

FANG WEIFU¹,ITO KAZUFUMI²

Affiliation:

1. Department of Mathematics, West Virginia University, Morgantown, WV 26506, USA

2. Department of Mathematics, North Carolina State University, Raleigh, NC 27695, USA

Abstract

We analyze a mathematical model for semiconductors derived from the hydrodynamic model under the massless assumption. This model augments the classical drift-diffusion model by including temperature as a dependent variable. We establish the existence of stationary solutions near the equilibrium state.

Publisher

World Scientific Pub Co Pte Lt

Subject

Applied Mathematics,Modeling and Simulation

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0218202501001124

Reference13 articles.

1. An energy-transport model for semiconductors derived from the Boltzmann equation

2. Modeling and Analysis of Laser-Beam-Induced Current Images in Semiconductors

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4. On the Time-Dependent Drift-Diffusion Model for Semiconductors

5. Global Solutions of the Time-Dependent Drift-Diffusion Semiconductor Equations

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