Reliable resistive switching and its tunability in La-doped PbTiO3\TiO2 composite bilayer

Author:

Wang Ying12,Lin Shaopeng23,Zhang Xiaoyue23,Xiong Weiming12,Wang Biao12,Zheng Yue12

Affiliation:

1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China

2. Micro & Nano Physics and Mechanics Research Laboratory, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275, P. R. China

3. Sino-French Institute of Nuclear Engineering and Technology, Zhuhai Campus, Sun Yat-sen University, Zhuhai 519082, P. R. China

Abstract

Nanoscale La-doped PbTiO 3( PLT )\ TiO 2 (PLTT) composite structures have been fabricated. It shows that the structure presents reliable resistive switching (RS) behavior, and importantly, has great tunability on RS characteristics such as forming/set/reset voltages and resistance ratio by adjusting the PLT layer thickness. Particularly, the set voltage can be tuned at a large range from several volts to dozens of volts. Meanwhile, the set current keeps almost the same, indicating the RS is current dominating. The space-charge-limited current (SCLC) feature indicates that the localized traps are decisive for the RS. Our result sheds light on the prospects of composite structures for designing tunable RS devices.

Publisher

World Scientific Pub Co Pte Lt

Subject

General Materials Science

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