Fast growth of amorphous Si nanowires by direct current arc plasma jet chemical vapor deposition

Abstract

Silicon (Si) nanowires were synthesized by direct current arc plasma jet chemical vapor deposition. It was found that growth temperature and growth time played important roles in the morphologies of the Si nanowires. The possible formation mechanism of Si nanowire was also proposed according to the corresponding results. In addition, the Ni particles are dispersed on the Si substrate with the help of alkaline etching, which enables the lateral growth of Si nanowires on a Si substrate. This offers a simple and practical way of synthesizing and positioning the Si nanowires on a substrate.