Charge generation performance enhancement by size-dependent Cu2GeSe3quantum dot-sensitized solar cells

Author:

Liu Zhou1,Peng Zhuoyin1,Chen Jianlin1,Li Wei1,Chen Jian1,Ren Yanjie1

Affiliation:

1. Key Laboratory of Efficient & Clean Energy Utilization, The Education Department of Hunan Province, Hunan Province 2011 Collaborative Innovation Center of Clean Energy and Smart Grid, School of Energy and Power Engineering, Changsha University of Science and Technology, Changsha, 410111, P. R. China

Abstract

Cu2GeSe3 quantum dot is introduced to instead of non-toxic CuInSe2 as a sensitizer for solar cells, which is employed to enhance the photovoltaic performance. Cu2GeSe3 quantum dots with various sizes are prepared by thermolysis process, which are employed for the fabrication of quantum dot-sensitized solar cells (QDSSC) according to assembly linking process. The optical absorption properties of the Cu2GeSe3 quantum dot-sensitized photo-electrodes have been obviously enhanced by the size optimization of quantum dots, which are better than that of CuInSe2-based photo-electrodes. Due to the balance on the deposition quantity and charge transfer property of the quantum dots, 3.9[Formula: see text]nm-sized Cu2GeSe3 QDSSC exhibits the highest current density value and incident photon conversion efficiency response, which result in a higher photovoltaic conversion efficiency than that of CuInSe2 QDSSC. The modulation of Cu2GeSe3 QDs will further improve the performance of photovoltaic devices.

Funder

Natural Science Foundation of Hunan Province, China

Research Foundation of Education Bureau of Hunan Province

Key Scientific Research Project of the Education Department of Hunan Province

Key Laboratory of Efficient & Clean Energy Utilization, the Education Department of Hunan Province

Publisher

World Scientific Pub Co Pte Lt

Subject

General Materials Science

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