Silicon quantum dots embedded in amorphous SiC matrix for third-generation solar cells: Microstructure control by RF discharge power

Author:

Cheng Qijin12,Levchenko Igor34,Song Denyuan5,Xu Shuyan2,Ostrikov Kostya Ken346

Affiliation:

1. School of Energy Research, Xiamen University, Xiamen City, Fujian Province 361005, P. R. China

2. Plasma Sources and Applications Centre, National Institute of Education, 1 Nanyang Walk 637616, Singapore

3. Plasma Nanoscience Laboratories, Manufacturing Flagship, Commonwealth Scientific and Industrial Research Organisation (CSIRO), P. O. Box 218, Lindfield, NSW 2070, Australia

4. Plasma Nanoscience, School of Physics, The University of Sydney, Sydney, NSW 2006, Australia

5. State Key Lab. of Photovoltaic Materials & Technology, Yingli Group Co. Ltd., Baoding 071051, P. R. China

6. School of Chemistry, Physics, and Mechanical Engineering, Queensland University of Technology, Brisbane, QLD 4000, Australia

Abstract

A low-frequency (460 kHz), low-pressure, thermally non-equilibrium, high-density inductively coupled plasma (ICP) has been used to synthesize a novel, advanced photovoltaic material suitable for fabrication of third-generation solar cells. Silicon quantum dots (SQDs) embedded in an amorphous silicon carbide matrix were prepared at a very low substrate temperature of approximately 200°C without any hydrogen dilution. The effect of the radio-frequency (RF) power of the plasma discharge on the morphology and structure of the embedded quantum dots was studied. A brief discussion on the possible mechanisms of the quantum dot formation in the ICP is presented. This study is relevant to third-generation photovoltaic solar cells.

Publisher

World Scientific Pub Co Pte Lt

Subject

General Materials Science

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