Highly improved electrical and photoelectrical properties of electro-deposited p-type cuprous oxide

Abstract

In this work, the effect of annealing on the electrical and optical properties of electro-deposited [Formula: see text]-type cuprous oxide was studied in detail. It is found that the flat band potential linearly increased with annealing temperature and the carrier concentration was improved from 6.56 × 10[Formula: see text] cm[Formula: see text] to 23.3 × 10[Formula: see text] cm[Formula: see text]. The photocurrent intensity of cuprous oxide was improved from 12.1 [Formula: see text]A to 106.6 [Formula: see text]A after annealing. The dramatically improved electrical and photoelectrical properties might be ascribed to the highly improved crystallinity and the lower surface defect density caused by annealing.