Electrical performance study of carbon-based memristor with additional MXene capping layer

Abstract

A novel memristor device using platinum (Pt)/amorphous carbon (a-C)/MXene (Ti3C2)/silver (Ag) structure was proposed and experimentally fabricated. Its electrical measurements clearly indicated that in comparison with the device without MXene capping, the proposed device exhibited lower “SET” voltage, longer endurance, and better stability. This can be attributed to the lower formation energy of Ag nanoclusters inside the MXene layer, derived from the first-principles calculations. Numerous device conductances were also obtained by choosing appropriate “SET” and “RESET” pulses, and thus enabled the imitation of synaptic potentiation/depression and pair-pulse facilitation. This implied its potential for in-memory computing and neuromorphic computing applications.