BaTiO3 THIN FILM BY CSD FROM MOLECULAR-DESIGNED PRECURSOR SOLUTION

Abstract

BaTiO3 (BT) thin films were deposited by the cost effective method of a chemical solution deposition (CSD). 0.3 M BT precursor solution was prepared by the partial hydrolysis method. Partially hydrolyzed Ti -alkoxide and Ba precursor solution was reacted to prepare the highly polymerized BT precursor solution. BT precursor solution was spin-coated on a Pt/Ti/SiO2/Si substrate with (100)-oriented LaNiO 3 (LNO) thin film electrode. In addition, effect of the pre-annealing at 600°C in O2 atmosphere was elucidated by measuring the electrical properties of the resulting BT thin films deposited by the different annealing process. As a result, molecular-design of the BT precursor and a LNO thin film electrode were effective to enhance the electrical properties of the resultant BT thin films, as well as 600°C pre-annealing.