Photoluminescence behavior and thermal stability of Eu-doped SiAlON thin films prepared by RF magnetron co-sputtering of SiAlON and Eu2O3 targets

Abstract

Eu-doped SiAlON thin films were successfully prepared by co-sputtering method using [Formula: see text]-SiAlON and Eu2O3 ceramic target. The photoluminescence behaviors of the films are investigated as a function of Eu ions concentration and temperature. The doping concentration of Eu ions in films can be effectively controlled by adjusting the sputtering power of Eu2O3 target. XRD analysis and SEM morphology images illustrate that the Eu-doped SiAlON thin films are amorphous, dense, and smooth, no matter they experienced high temperature heat-treatment or not after co-sputtering deposition. An intense and broad blue emission band peaking at 416–450[Formula: see text]nm was exhibited when the films upon excitation at 275[Formula: see text]nm, proving a typical Eu[Formula: see text] emission. The divalent state of Eu ions in films was further identified. As the sputtering power of Eu2O3 target increases, the emission peak of Eu[Formula: see text] shows a red-shift. The prepared thin films possess a better resistant property of thermal quenching and the relative fluorescence intensity at 100∘C can remain about 86% of its initial value at room temperature.