The study of composition and surface electron structure of nitrogen-doped DLC film prepared by PIII-D

Abstract

Nitrogen-doped diamond-like carbon (N-DLC) films were synthesized by plasma immersion ion implantation and deposition (PIII-D) at room temperature (RT). During the process of deposition, N 2 flow was changed from 0 to 10 sccm. Lifshitz–van der Waals/acid–base (LW-AB) approach was employed to study the surface electronic state of the films, X-ray photoelectron spectroscopic (XPS) and valence band spectra (VBS) were used to study chemical bonds and electron structure information inside the films. Bandgap of the films were calculated by the data from ultraviolet spectrophotometer. The results showed that synthesized films were n-type semiconductors and doping of nitrogen element will affect the accepted–electron capability of the film. The change tendency of the bandgap coincides with that of the ratio of acidic to alkaline component of the polar acid-alkali surface energy. There was much sp hybrid electronic state existed in the films, which mainly sp2 C=C / C=N and sp3 C–C / C–N bonds.