Silicon-Germanium Quantum-Cascade Lasers-Reference-Cited by-同舟云学术

Silicon-Germanium Quantum-Cascade Lasers

Published:2003-06 Issue:02 Volume:13 Page:547-573
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Kelsall Robert W.¹,Soref Richard A.²

Affiliation:

1. School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, UK

2. Sensors Directorate, Air Force Research Laboratory, Hanscom Air Force Base, MA 01731-2909, USA

Abstract

The prospects and advantages of silicon germanium quantum cascade lasers are discussed, from both physical and technological perspectives. A range of Si/SiGe intersubband laser configurations are discussed, for both edge and surface emission. Recent experimental activity on mid- and far-infrared devices is reviewed, and the value of detailed theoretical tools for heterostructure design is highlighted. Steps towards silicon optoelectronic integration are also considered.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S012915640300182X

Reference17 articles.

1. Electronic properties of Si/Si[sub 1−x−y]Ge[sub x]C[sub y] heterojunctions

2. Silicon-Germanium Strained Layer Materials in Microelectronics

3. Virtual-crystal approximation and alloy broadening of intersubband transitions inp-type SiGe superlattices

4. Intersubband hole-phonon and alloy disorder scattering in SiGe quantum wells

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