Simulation and Comparative Study of Propagation Delay in Multi-Channel Quantum SWS-CMOS-Based Inverters Using II–VI Gate Insulator

Abstract

This paper investigates the effect of lattice-matched II–VI ZnS-ZnMgS stack as the gate insulator on the propagation delay of a 4-state quantum spatial wavefunction-switched (SWS)-CMOS-based inverters and SRAMs. The novelty is the smaller density of interface states which reduces the fluctuations in the various threshold voltages of the SWS-FETs and logic and memory devices using them. Two SWS-CMOS-based inverter models using SiO2 and lattice-matched II–VI ZnS-ZnMgS stack as the gate insulator, are presented. Cadence simulations are used for comparing the single stage propagation delay of each inverter and their four-state logic transitions.