CONNECTING ELECTRICAL AND STRUCTURAL DIELECTRIC CHARACTERISTICS-Reference-Cited by-同舟云学术

CONNECTING ELECTRICAL AND STRUCTURAL DIELECTRIC CHARACTERISTICS

Published:2011-03 Issue:01 Volume:20 Page:65-79
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

BERSUKER G.¹,VEKSLER D.¹,YOUNG C. D.¹,PARK H.¹,TAYLOR W.¹,KIRSCH P.¹,JAMMY R.¹,MORASSI L.²,PADOVANI A.²,LARCHER L.²

Affiliation:

1. SEMATECH, 2706 Montopolis Dr., Austin, TX 78741, USA

2. DISMI Università di Modena e Reggio Emilia and IU.NET, 42100 Reggio Emilia, Modena, Italy

Abstract

An attempt is made to correlate electrical measurement results to specific defects in the dielectric stacks of high-k/metal gate devices. Defect characteristics extracted from electrical data were compared to those obtained by ab initio calculations of the dielectric structures. It is demonstrated that oxygen vacancies in a variety of charge states and configurations in the interfacial SiO2layer of the high-k gate stacks contribute to random telegraph noise signal, time-dependent dielectric breakdown, and the flatband voltage roll-off phenomenon.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156411006416

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