HIGH-FIELD ELECTRON TRANSPORT CONTROLLED BY OPTICAL PHONON EMISSION IN NITRIDES

Author:

KOMIRENKO S. M.1,KIM K. W.1,KOCHELAP V. A.2,STROSCIO M. A.3

Affiliation:

1. Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695-7911, USA

2. Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev-28, 252650, Ukraine

3. Department of Electrical and Computer Engineering, University of Illinois at Chicago, Chicago, Illinois 60707, USA

Abstract

We have investigated the problem of electron runaway at strong electric fields in polar semiconductors focusing on the nanoscale nitride-based heterostructures. A transport model which takes into account the main features of electrons injected in short devices under high electric fields is developed. The electron distribution as a function of the electron momenta and coordinate is analyzed. We have determined the critical field for the runaway regime and investigated this regime in detail. The electron velocity distribution over the device is studied at different fields. We have applied the model to the group-III nitrides: InN, GaN and AlN. For these materials, the basic parameters and characteristics of the high-field electron transport are obtained. We have found that the transport in the nitrides is always dissipative. However, in the runaway regime, energies and velocities of electrons increase with distance which results in average velocities higher than the peak velocity in bulk-like samples. We demonstrated that the runaway electrons are characterized by the extreme distribution function with the population inversion. A three-terminal heterostructure where the runaway effect can be detected and measured is proposed. We also have considered briefly different nitride-based small-feature-size devices where this effect can have an impact on the device performance.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Properties of Materials Under High Electric Field;Materials Under Extreme Conditions;2017

2. Field Emission Properties of ZnO, ZnS, and GaN Nanostructures;Nanoscale Photonics and Optoelectronics;2010

3. Hot-electron transport in AlGaN∕GaN two-dimensional conducting channels;Applied Physics Letters;2004-11-29

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