Macromodel of G4FET Enabling Fast and Reliable SPICE Simulation for Innovative Circuit Applications
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Published:2018-09
Issue:03n04
Volume:27
Page:1840015
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ISSN:0129-1564
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Container-title:International Journal of High Speed Electronics and Systems
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language:en
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Short-container-title:Int. J. Hi. Spe. Ele. Syst.
Author:
Hasan Md Sakib1,
Shamsir Samira1,
Shawkat Mst Shamim Ara1,
Garcia Frances1,
Islam Syed K.1,
Rose Garrett S.1
Affiliation:
1. Department of Electrical Engineering and Computer Science, The University of Tennessee, Knoxville, TN 37996, USA
Abstract
A macromodel of silicon-on-insulator (SOI) four-gate transistor (G4FET) is presented in this paper to aid circuit designers to explore innovative applications circuit with this multi-gate transistor. A number of works based on analytical solution, numerical simulation and experimental results of G4FET have been previously reported. However, designing new interesting circuits with G4FETs requires a SPICE model that will work sufficiently well throughout the desired operating regions. Although it is theoretically possible to solve coupled non-linear differential equations to explore different operating conditions, this will take an excessive amount of time making it unsuitable for useful circuit design. Therefore, a macromodel approach is adopted in this work to provide a reasonably fast and accurate circuit simulation. G4FET combines the functionality of MOSFET and JFET devices which already have robust, fast and reliable SPICE models. A macromodel approach which is capable of combining these existing models including the interactions between multiple gates will be beneficial for any circuit designer. The feasibility of the macromodel is justified by simulating several analog and digital circuits and comparing against available experimental results.
Publisher
World Scientific Pub Co Pte Lt
Subject
Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials
Cited by
1 articles.
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