Compact Spice Models for Terafets

Abstract

Field effect transistors (FETs) in plasmonic regimes of operation could detect terahertz (THz) radiation and operate as THz interferometers, spectrometers, frequency-to-digital converters and THz modulators and sources. We report on the development of compact models for Si MOS (Metal-Oxide-semiconductor) and heterostructure-based plasmonic FETs (or TeraFETs) suitable for circuit design in the THz range and based on the multi-segment unified charge control model. This model accounts for the electron inertia effect (by incorporating segmented Drude inductances), for the ballistic field effect mobility, which is proportional to the channel length, for parasitic resistances and capacitances and for the leakage current. It is validated by comparison with experimental data and TCAD simulation results. The model can be used for simulation and optimization of sub-THz and THz detectors. Our simulations use up to 200 segments in the device channel. The results are also in good qualitative agreement with the hydrodynamic simulations. Applications of our model could dramatically reduce astronomical design costs of nanoscale VLSI reaching US$1.5 billion for the 3 nm technological node.