SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS-Reference-Cited by-同舟云学术

SINGLE-EVENT EFFECTS IN III-V SEMICONDUCTOR ELECTRONICS

Published:2004-06 Issue:02 Volume:14 Page:311-325
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

McMORROW DALE¹,MELINGER JOSEPH S.¹,KNUDSON ALVIN R.²

Affiliation:

1. Naval Research Laboratory, Code 6812, 4555 Overlook Avenue, SW, Washington, DC 20375, USA

2. SFA Inc., Largo, MD, 20774, USA

Abstract

Single-event effects are a serious concern for high-speed III-V semiconductor devices operating in radiation-intense environments. GaAs integrated circuits (ICs) based on field effect transistor technology exhibit single-event upset sensitivity to protons and very low linear energy transfer (LET) particles. The current understanding of single-event effects in III-V circuits and devices, and approaches for mitigating their impact, are discussed.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156404002375

Reference48 articles.

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2. Single-event phenomena in GaAs devices and circuits

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4. Satellite Anomalies from Galactic Cosmic Rays

5. Single-event upset in GaAs E/D MESFET logic

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