Numerical Investigation of the Electrothermal Properties of SOI FinFET Transistor-Reference-Cited by-同舟云学术

Numerical Investigation of the Electrothermal Properties of SOI FinFET Transistor

Published:2023-07-20 Issue:02n04 Volume:32 Page:
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Nasri Faouzi¹²,Salama Husien³

Affiliation:

1. Center for Research in Microelectronics and Nanotechnology (CRMN), Sousse, Tunisia

2. Laboratory of Thermal Processes, Research and Technology Centre of Energy, Hammam-Lif, Tunisia

3. Computer Systems Institute, Boston, USA

Abstract

This paper investigates the non-Fourier transient heat transfer in an SOI FinFET transistor. The calibrated drift-diffusion (D-D) model in conjunction with the ballistic diffusive (BDE) model is used as an electrothermal model to predict phonon and electron transports in the quasi-ballistic regime. The finite element method has been employed to generate the numerical results. The proposed mathematical formulation was found to capture the transfer characteristics and the temporal temperature as given by TCAD simulation and experimental data. On the other hand, we have demonstrated that after 100 ns, the 14 nm Bulk FinFET supports better temperature distribution than the 14 nm SOI FinFET.

Publisher

World Scientific Pub Co Pte Ltd

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156423500209

Reference14 articles.

1. Nanoheat Conduction Performance of Black Phosphorus Field-Effect Transistor

2. Analysis of the Ultrafast Transient Heat Transport in Sub 7-nm SOI FinFETs Technology Nodes Using Phonon Hydrodynamic Equation

3. Design optimization of nanoscale electrothermal transport in 10 nm SOI FinFET technology node