HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA-Reference-Cited by-同舟云学术

HEMT-BASED NANOMETER DEVICES TOWARD TERAHERTZ ERA

Published:2007-09 Issue:03 Volume:17 Page:509-520
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

SANO EIICHI¹,OTSUJI TAIICHI²

Affiliation:

1. Research Center for Integrated Quantum Electronics, Hokkaido University, North 13, West 8, Kita-ku, Sapporo 060-8628, Japan

2. Research Institute for Electronic Communications, Tohoku University, Katahira 2-1-1, Aoba-ku, Sendai 980-8577, Japan

Abstract

The terahertz region is one of the unexplored bands. This paper first reviews the present status of conventional high-speed devices, especially InP-based high electron mobility transistors (HEMTs), and addresses the technological problems facing the goal of terahertz operation. As an alternative approach to solve these problems, we developed a plasmon-resonant photomixer for realizing a coherent terahertz continuous-wave source. Preliminary results on electromagnetic response to impulsive photoexcitation at room temperature are reported briefly.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156407004709

Reference21 articles.

1. Shallow water analogy for a ballistic field effect transistor: New mechanism of plasma wave generation by dc current

2. Far‐infrared emission spectroscopy of hot two‐dimensional plasmons in Al0.3Ga0.7As/GaAs heterojunctions

3. Detection, mixing, and frequency multiplication of terahertz radiation by two-dimensional electronic fluid