INTRODUCTION TO SOI MOSFETs: CONTEXT, RADIATION EFFECTS, AND FUTURE TRENDS-Reference-Cited by-同舟云学术

INTRODUCTION TO SOI MOSFETs: CONTEXT, RADIATION EFFECTS, AND FUTURE TRENDS

Published:2004-06 Issue:02 Volume:14 Page:465-487
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

CRISTOLOVEANU SORIN¹,FERLET-CAVROIS VÉRONIQUE²

Affiliation:

1. Institute of Microelectronics, Electromagnetism and Photonics (UMR CNRS, INPG & UJF), ENSERG, B.P. 257, 38016 Grenoble Cedex 1, France

2. Commissariat à l'Energie Atomique (CEA-DIF), B.P. 12, 91680 Bruyères-le Châtel, France

Abstract

The context of SOI technology is briefly presented in terms of wafer fabrication, configuration/performance of SOI devices, and operation mechanisms in partially and fully depleted MOSFETs. Typical radiation effects, induced by single particles and cumulated dose, are evoked: BOX degradation, parasitic bipolar action, coupling effects, transistor latch, and back-channel conduction. The future of SOI is tentatively explored, by discussing the further scalability of SOI-MOSFETs as well as the innovating architectures proposed for the ultimate generations of SOI transistors.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156404002466

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