SILICON CARBIDE STATIC INDUCTION TRANSISTORS-Reference-Cited by-同舟云学术

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SILICON CARBIDE STATIC INDUCTION TRANSISTORS

Published:2005-12 Issue:04 Volume:15 Page:997-1033
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

DeSalvo Gregory C.¹

Affiliation:

1. Compound Semiconductor Research Group, Science and Technology Center, Northrop Grumman Corporation – Electronic Systems, USA

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156405003478

Reference50 articles.

1. Recent advances in power electronics

2. Evaluation of modern power semiconductor devices and future trends of converters

3. K. Spangenberg, Vacuum Tubes (McGraw-Hill, New York, NY, 1948) pp. 201–237.

4. E. Chaffee, Theory of Thermionic Vacuum Tubes (McGraw–Hill, New York, NY, 1933) pp. 144–191.

5. K. Spangenberg, Vacuum Tubes (McGraw–Hill, New York, NY, 1948) pp. 266–297.

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3. Influence of contact resistance on the electrical characteristics of organic static induction transistors;Semiconductor Science and Technology;2019-08-28

4. 1230 V β-Ga2O3 trench Schottky barrier diodes with an ultra-low leakage current of <1 μA/cm2;Applied Physics Letters;2018-11-12

5. Breakdown mechanism in 1 kA/cm2 and 960 V E-mode β-Ga2O3 vertical transistors;Applied Physics Letters;2018-09-17

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