Terahertz Response of Tightly Concatenated Two Dimensional InGaAs Field-Effect Transistors Integrated on a Single Chip-Reference-Cited by-同舟云学术

Terahertz Response of Tightly Concatenated Two Dimensional InGaAs Field-Effect Transistors Integrated on a Single Chip

Published:2016-09 Issue:03n04 Volume:25 Page:1640012
ISSN:0129-1564
Container-title:International Journal of High Speed Electronics and Systems
language:en
Short-container-title:Int. J. Hi. Spe. Ele. Syst.

Author:

Yermolayev D. M.¹²,Polushkin E. A.¹,Koval’chuk A. V.¹,Shapoval S. Yu.¹,Marem’yanin K. V.³,Gavrilenko V. I.³,Maleev N. A.⁴,Ustinov V. M.⁴,Zemlyakov V. E.⁵,Yegorkin V. I.⁵,Bespalov V. A.⁵,Popov V. V.⁶⁷⁸,Khmyrova I.⁹

Affiliation:

1. Laboratory of Epitaxial Micro- and Nanostructures, Institute of Microelectronic Technology and High-Purity Materials, Chernogolovka, 142432, Russia

2. JSC “Russian Space System”, Moscow, 111250, Russia

3. Department for Physics of Semiconductors, Institute for Physics of Microstructures, Nizhny Novgorod, 603950, Russia

4. Physics of Semiconductor Heterostructure, Ioffe Physical Technical Institute, St. Petersburg, 194021, Russia

5. National Research University of Electronic Technology, Zelenograd, 124498, Russia

6. Kotelnikov Institute of Radio Engineering and Electronics (Saratov Branch), Saratov, 410019, Russia

7. Physics Department, Saratov State University, Saratov, 410012, Russia

8. Saratov Scientific Center of the Russian Academy of Sciences, Saratov, 410028, Russia

9. University of Aizu, Aizu-Wakamatsu, Aizu-Wakamatsu, 965-8580, Japan

Abstract

THz response of AlGaAs/InGaAs/GaAs HEMT structure has been investigated. The structure consists of the serpentine chain of series connected HEMTs. The source of one is the drain for the subsequent transistor. Experiments have been showed THz response peculiarities of such structures and enhanced noise equivalent power.

Publisher

World Scientific Pub Co Pte Lt

Subject

Electrical and Electronic Engineering,Hardware and Architecture,Electronic, Optical and Magnetic Materials

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0129156416400127

Reference13 articles.

1. Ultrahigh sensitive plasmonic terahertz detector based on an asymmetric dual-grating gate HEMT structure

2. Broadband terahertz imaging with highly sensitive silicon CMOS detectors

3. Enhanced performance of resonant sub-terahertz detection in a plasmonic cavity

4. Detection of terahertz radiation by tightly concatenated InGaAs field-effect transistors integrated on a single chip

5. Enhanced Plasma Wave Detection of Terahertz Radiation Using Multiple High Electron-Mobility Transistors Connected in Series