A comprehensive study on electronic properties of monolayer MOS2 with spin-orbit coupling
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Published:2023-11-18
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Volume:
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ISSN:2047-6841
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Container-title:International Journal of Computational Materials Science and Engineering
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language:en
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Short-container-title:Int. J. Comp. Mat. Sci. Eng.
Author:
Khan MD Niloy1,
Ferdous Naim1,
Al Asad MD. Abdullah1ORCID,
Chowdhury Shahbaz Kamal1,
Rabbi Fazle1
Affiliation:
1. Electrical and Electronic Engineering, Bangabandhu Sheikh Mujibur, Rahman Science & Technology University Gopalganj, Bangladesh
Abstract
Monolayer Molybdenum disulfide (ML-MoS2) has emerged as a promising two-dimensional (2D) material with unique electronic, optical and mechanical properties. In this paper, with the aid of first-principles calculations, we explain the optimization of the structural and computational parameters and discuss the electrical properties of ML-MoS2. The electronic properties were studied comparatively with and without considering the spin-orbit coupling (SOC) effect that shows, ML-MoS2 has a direct bandgap. A decrease in bandgap energy by 100 meV and a [Formula: see text]-valley splitting of 100 mV were observed with the inclusion of SOC. The electronic properties were further analyzed using fat band structures and projected density of states (PDOS), which depict the predominant contribution of Mo [Formula: see text][Formula: see text]2[Formula: see text][Formula: see text]2, [Formula: see text][Formula: see text] and Mo [Formula: see text][Formula: see text]2 orbital to the valence band maximum (VBM) and conduction band minimum (CBM), respectively. Strain-induced bandgap variation was also observed due to the deformation of the crystal structures by shifting and splitting of the energy levels.
Publisher
World Scientific Pub Co Pte Ltd
Subject
Computer Science Applications,Mechanics of Materials,General Materials Science,Modeling and Simulation,Numerical Analysis