THE EFFECTS ON HEAT TREATMENT OF SIC COATED / GRAPHITE PLATE BY RF SPUTTERING SYSTEM

Abstract

Silicon carbide film was coated by RF sputtering system onto graphite plate substrate. Surface roughness of substrate was polished by wet polishing with sand paper, number of 3000. RF power was 200 W in 0.4 Pa of argon gas. Deposition holding time was 3hours in 600 °C temperature. Specimens were heat treated by 1200, 1400 and 1500 °C for 1 hour to research the effect of heat treatment on SiC coating layer. Atomic Force Microscope (AFM) was used to characterize the surface morphology and the Sq surface roughness. AFM was used to investigate the grain size and roughness of the surface of thin coating film. X-ray diffraction (XRD) was used for detecting the coated SiC thin film by thin film mode. FE-SEM was used to characterize the microstructure of SiC coating film.