The Structural, Morphological, and Resistive Switching Memory Studies of Zinc Tungstate Prepared by Hydrothermal Method

Abstract

Nanostructure-based resistive switching memory devices are being developed for low power, multilevel storage capability, extended retention capacity, and scalable devices. The zinc tungstate (ZnWO[Formula: see text] nanoparticle was prepared via the facile hydrothermal method. The X-ray diffraction technique confirmed ZnWO4 monoclinic phase and crystallite nature. The scanning electron microscope was used to identify the rod-like ZnWO4 nanostructure, and further, the lattice orientation was investigated by high-resolution transmission electron microscopy. X-ray photoelectron spectroscopy confirmed the binding states with composition of ZnWO4. Resistive switching memory based on ZnWO4 was produced and resulted in low-operating voltage.