Emission of SiOx Nanowires Resulting from Pressure Changes in a Closed System Comparable to a Tungsten Electron Gun at a High Voltage

Abstract

SiOx nanowire emission with changes in the vapor pressure of Sn metal results in a screw motion of SiOx nanowires in a closed system consisting of Sn and SiOx. A convoluted flouncing-off process is elucidated here, in which the elementary particles are not electrons, but nanowires. In order to understand the unprecedented synthetic phenomena, the system that emits SiOx nanowires is compared with tungsten electron gun by comparing the component, functionalization, and theoretical background of both the techniques. The results so obtained, which are the first of its kind, open the way not only to produce three-dimensional micro- and nano-structures from one-dimensional nanostructures without requiring any additional artificial manipulation process but also to focus them onto a desired small region for elaborate deposition.