Permittivity-Frequency Dependencies Study of Neutron-Irradiated Nanocrystalline Silicon Carbide (3C-SiC)

Abstract

Nanocrystalline 3C-SiC was irradiated by neutron flux ([Formula: see text] n[Formula: see text][Formula: see text][Formula: see text]cm[Formula: see text]s[Formula: see text] up to 20[Formula: see text]h in the TRIGA Mark II type research reactor. The experiments have been conducted in the 0.1[Formula: see text]Hz–2.5[Formula: see text]MHz frequency and 100–400[Formula: see text]K temperature ranges. The frequency dependencies of real and imaginary parts of the permittivity of nanomaterial were analyzed comparatively before and after neutron irradiation. After neutron irradiation, there was increase in dopant element concentration in the nanocrystalline 3C-SiC particles. Concentration of new dopant elements in the 3C-SiC nanomaterial directly affects dielectric polarization and leads to increased permittivity. Simultaneously, after neutron irradiation, agglomeration and amorphous transformation influence on the polarization of nanocrystalline 3C-SiC. Moreover, 3C-SiC nanoparticle interface polarization gives rise to dispersion. It was found that ionic polarization was dominant in the nanocrystalline 3C-SiC particles.