Nonvolatile Bistable Resistive Switching in Polyimide Bearing Trifluoromethyl Film

Abstract

A functional polyimide (CF3 PI) was used as the active layer in our present work for electrical resistive memory device applications. Current–voltage ([Formula: see text]–[Formula: see text]) characteristics analysis on the polyimide memory devices indicates that the polyimide possesses a nonvolatile rewritable flash characteristic with an ON/OFF current ratio of about 104 at the threshold voltage of around [Formula: see text][Formula: see text]V and 3.8[Formula: see text]V. In addition, the device using the CF3 PI as the active layer reveals excellent long-term operation stability with the endurance of reading cycles up to 108 under a voltage pulse and retention times for at least 106[Formula: see text]s under constant voltage stress (1[Formula: see text]V). The conduction mechanisms are elucidated on the basis of the thermionic emission theory and filament conduction.