Affiliation:
1. Department of Physics, East Tehran Branch, Islamic Azad University, Tehran, Iran
Abstract
In this study Al-doped Zinc Oxide (AZO) thin films were successfully deposited on the flexible Polymethyl methacrylate (PMMA) substrate by RF magnetron sputtering. The effects of RF power on the crystal structure, morphology, thickness and optical properties of AZO thin films have been investigated. The AZO thin films were analyzed using X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), DEKTAK 3 profilometer, UV–Visible spectroscopy and room temperature photoluminescence (PL) spectroscopy. The XRD patterns show that increase of RF power leads to increase in the predominant direction along (100) and crystal plane of hexagonal ZnO. Moreover, the transmittance of thin films decreased from 76% to 61% and optical bang gap varied among 3.34[Formula: see text]eV to 3.22[Formula: see text]eV with increasing RF power. The PL spectra show excellent light-emitting characteristics: 375[Formula: see text]nm, 428[Formula: see text]nm, 467[Formula: see text]nm and 505[Formula: see text]nm. The results indicate that the peak intensity increases with increasing RF power from 80[Formula: see text]W to 180[Formula: see text]W.
Funder
East Tehran Branch, Islamic Azad University
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,General Materials Science
Cited by
12 articles.
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