THE ADVANTAGE OF LOW GROWTH TEMPERATURE AND V/III RATIO FOR InxGa1-xAs NANOWIRES GROWTH-Reference-Cited by-同舟云学术

THE ADVANTAGE OF LOW GROWTH TEMPERATURE AND V/III RATIO FOR InxGa1-xAs NANOWIRES GROWTH

Published:2011-04 Issue:02 Volume:06 Page:159-165
ISSN:1793-2920
Container-title:Nano
language:en
Short-container-title:NANO

Author:

WIBOWO EDY¹,OTHAMAN ZULKAFLI²,SAKRANI SAMSUDI²,SUMPONO IMAM¹³

Affiliation:

1. Ibnu Sina Institute for Fundamental Science Studies, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia

2. Department of Physics, Faculty of Science, Universiti Teknologi Malaysia, 81310 UTM Skudai, Johor, Malaysia

3. Department of Physics, Faculty of Mathematic and Science, Universitas Negeri Semarang, Semarang, Indonesia

Abstract

Cylindrical In x Ga 1-x As nanowires (NWs) perpendicular to the substrate have been successfully grown using MOCVD. Morphology of In x Ga 1-x As NWs has been observed using Field Emission-Scanning Electron Microscopy (FE-SEM) and Transmission Electron Microscopy (TEM). Both FE-SEM and TEM results show that the NWs grown at low growth temperature and V/III ratio were via direct impinging mechanism. Energy Dispersive X-ray spectroscopy (EDX) results confirm that the cylindrical NWs grown via direct impinging mechanism and tends to have uniform chemical composition.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,General Materials Science

Link

https://www.worldscientific.com/doi/pdf/10.1142/S1793292011002457

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