Multistep Controllability Synthesis and Growth Mechanism of ZnO Nanopagoda for Schottky Diode Device

Abstract

Ordered ZnO arrays with a peculiar nanostructure were synthesized by a multistep synthesis process. The first step was the preparation of ZnO seed to induce the formation of ZnO array via potentiostatic electrodeposition method using a typical three electrode set-up. The second step was fabricating ZnO array along seed by Chemical Bath Deposition. Structural analysis of ZnO was carried out with X-ray diffraction (XRD), which showed a hexagonal wurtzite structure, and the selected area electron diffraction (SAED) patterns indicated that nanocrystalline is a part of monocrystal. The scanning electron microscope (SEM) and transmission electron microscope (TEM) were used to study the microstructure, and showed a pagoda-like microstructure with a tiny top and large bottom, which had an average top diameter of exceeding 800[Formula: see text]nm at seed-depositing time of 60[Formula: see text]s, and then growth mechanisms are subsequently given a further explanation, viewed from kinetics and thermodynamics. In addition, the current–voltage curves of schottky diode devices with ZnO nanopagoda arrays revealed that ZnO films arrays along grown ZnO seed had a higher reverse saturation current than ZnO films grown without seed, which are [Formula: see text] A and [Formula: see text] A, respectively. The minimum turn-on voltage of the diode with ZnO seed deposited 60[Formula: see text]s is 0.18[Formula: see text]V, without seed is 0.52[Formula: see text]V.