Fabrication of High Sensitive UV Photodetector Based on n-ZnO Nanowire/n-Porous-Si Heterojunction
Author:
Affiliation:
1. Semiconductor Research Laboratory, Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran
2. Faculty of New Sciences and Technologies, University of Tehran, Tehran, Iran
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,General Materials Science
Link
https://www.worldscientific.com/doi/pdf/10.1142/S1793292017500448
Reference26 articles.
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