INCREASING OF THE SHARPNESS OF p–n JUNCTIONS BY LASER PULSES-Reference-Cited by-同舟云学术

INCREASING OF THE SHARPNESS OF p–n JUNCTIONS BY LASER PULSES

Published:2011-02 Issue:01 Volume:06 Page:31-40
ISSN:1793-2920
Container-title:Nano
language:en
Short-container-title:NANO

Author:

PANKRATOV E. L.¹

Affiliation:

1. Nizhny Novgorod State University of Architecture and Civil Engineering, 65 Il'insky Street, Nizhny Novgorod, 603950, Russia

Abstract

Dopant redistribution in a multilayer structure during annealing by laser pulses for production of implanted-junction rectifiers has been analyzed. The analysis shows that heating the surface region of the multilayer structure leads to increasing of previously described effect of simultaneously increasing of sharpness of implanted-junction rectifier and homogeneity of dopant distribution in doped area. It was found that the theoretical spatial distribution of dopant agrees with the experimental one. Annealing time has been optimized for laser pulse annealing.

Publisher

World Scientific Pub Co Pte Lt

Subject

Condensed Matter Physics,General Materials Science

Link

https://www.worldscientific.com/doi/pdf/10.1142/S1793292011002329

Reference23 articles.

1. Shallow p-n junctions formed in silicon using pulsed photon annealing

2. Concentration dependent and independent Si diffusion in ion-implanted GaAs

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