PHOTODETACHMENT ofH- NEAR A SOFT WALL-Reference-Cited by-同舟云学术

PHOTODETACHMENT ofH- NEAR A SOFT WALL

Published:2007-06 Issue:02 Volume:06 Page:353-362
ISSN:0219-6336
Container-title:Journal of Theoretical and Computational Chemistry
language:en
Short-container-title:J. Theor. Comput. Chem.

Author:

YANG GUANGCAN¹,ZHENG YIZHUANG¹,CHI XIANXING¹

Affiliation:

1. School of Physics and Electronic Information, Wenzhou University, Wenzhou, 325027, China

Abstract

We investigate the photodetachment of H - near an inelastic interface semiclassically. It is found that the inelasticity of an interface has significant influence on the photodetachment process. We have derived an analytical formula of the cross section of photodetachment. The spectrum of photodetachment consists of a smooth background and a sinusoidal oscillation whose frequency depends on the electronic energy, the reflection of the wall and the distance between the ion and the wall.

Publisher

World Scientific Pub Co Pte Lt

Subject

Computational Theory and Mathematics,Physical and Theoretical Chemistry,Computer Science Applications

Link

https://www.worldscientific.com/doi/pdf/10.1142/S0219633607002939

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