EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION
Author:
Affiliation:
1. Department d'Enginyeria Electònica, Universitat Autònoma de Barcelona, Bellaterra 08193, Spain
2. Facultdad de Ciencias, Universidad Abdelmalek Essaâdi, Tetuán 93000, Morocco
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
General Physics and Astronomy,General Mathematics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S0219477512410027
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