Affiliation:
1. CEM2 - Centre d'Electronique et de Micro-optoélectronique de MONTPELLIER, Université Montpellier II, Place Eugène Bataillon – 34095 MONTPELLIER Cedex 5, France
Abstract
Experimental results are presented for current-voltage and dynamic resistance-voltage characteristics of Hg1-xCdxTe ion implanted n+-on-p junction photodiodes with x = 0,3. By measuring the temperature dependence of the dc characteristics in the temperature range [77 K, 175 K], it was found that the dark current can be represented with two components at low reverse-bias: diffusion and surface leakage current. Furthermore, reporting on electrical noise spectral density as a function of temperature and dark current, we assume that below 120 K, [Formula: see text] noise current is surface leakage current related.
Publisher
World Scientific Pub Co Pte Lt
Subject
General Physics and Astronomy,General Mathematics
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1 articles.
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